? 2008 ixys corporation, all rights reserved trench tm p & n-channel power mosfet common drain topology ds100037(09/08) symbol test conditions characteristic values min. typ. max. c p coupling capacitance between shorted 40 pf pins and mounting tab in the case d s ,d a pin - pin 1.7 mm d s ,d a pin - backside metal 5.5 mm weight 9 g FMP76-010T features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z low q g z low drain-to-tab capacitance z low package inductance advantages z low gate drive requirement z high power density z low drain to ground capacitance z fast switching applications z dc and ac motor drives z class ab audio amplifiers z multi-phase dc to dc converters z industrial battery chargers z switching power supplies symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 100 v v dgr t j = 25 c to 150 c, r gs = 1m - 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 54 a i dm t c = 25 c, pulse width limited by t jm - 230 a i a t c = 25 c - 38 a e as t c = 25 c 1.0 j p d t c = 25 c 132 w p - channel advance technical information symbol test conditions maximum ratings t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isold 50/60h z , rms, t = 1min, leads-to-tab 2500 ~v t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. p ch. n ch. v dss - 100v 100v i d25 - 54a 62a r ds(on) 24m 11m t rr(typ) 70ns 67ns t2 3 5 4 1 2 t1 2 3 4 5 1 isoplus i4-pak tm 1 5 isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. FMP76-010T isoplus i4-pak tm outline ref: ixys co 0077 r0 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions 2 characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 100 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 20 v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v -15 a t j = 125 c - 750 a r ds(on) v gs = -10v, i d = - 38a, note 1 24 m g fs v ds = -10v, i d = - 38a, note 1 35 58 s c iss 13.7 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 890 pf c rss 275 pf t d(on) resistive switching times 25 ns t r v gs = -10v, v ds = 0.5 z v dss , i d = - 38a 40 ns t d(off) r g = 1 (external) 52 ns t f 20 ns q g(on) 197 nc q gs v gs = -10v, v ds = 0.5 z v dss , i d = - 38a 65 nc q gd 65 nc r thjc 0.95 c/w r thcs 0.15 c/w drain-source diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions 2 min. typ. max. i s v gs = 0v - 54 a i sm repetitive, pulse width limited by t jm - 304 a v sd i f = - 38a, v gs = 0v, note 1 - 1.3 v t rr i f = - 38a, di/dt = 100a/ s 70 ns q rm v r = - 50v, v gs = 0v 215 nc i rm - 6 a
? 2008 ixys corporation, all rights reserved FMP76-010T n - channel symbol test conditions maximum ratings v dss t j = 25 c to 150 c 100 v v dgr t j = 25 c to 150 c, r gs = 1m 100 v v gsm transient 20 v i d25 t c = 25 c 62 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c 65 a e as t c = 25 c 500 mj p d t c = 25 c 89 w symbol test conditions 2 characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 25a, (note 1) 11 m g fs v ds = 10v, i d = 60a, (note 1) 55 93 s c iss 5080 pf c oss v gs = 0v, v ds = 25 v, f = 1 mhz 635 pf c rss 95 pf t d(on) resistive switching times 30 ns t r v gs = 10v, v ds = 0.5 z v dss , i d = 25a 47 ns t d(off) r g = 5 (external) 44 ns t f 28 ns q g(on) 104 nc q gs v gs = 10v, v ds = 0.5 z v dss , i d = 25a 30 nc q gd 29 nc r thjc 1.4 c/w r thcs 0.15 c/w
ixys reserves the right to change limits, test conditions, and dimensions. FMP76-010T advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice. source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions 3 min. typ. max. i s v gs = 0v 62 a i sm repetitive, pulse width limited by t jm 350 a v sd i f = 25a, v gs = 0v, note 1 1.0 v t rr 67 ns q rm 160 nc i rm 4.7 a note 1: pulse test, t 300 s, duty cycle, d 2 %. i f = 25a, -di/dt = 100a/ s v r = 50v, v gs = 0v
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